Focusing on major application directions and accelerating the development of third-generation semiconductors

Recently, at the 2023 Zhongguancun Forum "Beijing (International) Third Generation Semiconductor Innovation and Development Forum", Xiang Libin, a member of the Party Group and Vice Minister of the Ministry of Science and Technology, stated that third-generation semiconductors represented by silicon carbide and gallium nitride have excellent performance and have a huge market in fields such as new energy vehicles, information communication, and smart grids.Building an Industrial EcologyXiang Libin stated that the "13th Five Year Plan" period has basically solved the "availability" problem of China's third-generation semiconductor products and related equipment, and the "14th Five Year Plan" period will focus on solving the problems of "usability, usability" and sustainable innovation ability

Recently, at the 2023 Zhongguancun Forum "Beijing (International) Third Generation Semiconductor Innovation and Development Forum", Xiang Libin, a member of the Party Group and Vice Minister of the Ministry of Science and Technology, stated that third-generation semiconductors represented by silicon carbide and gallium nitride have excellent performance and have a huge market in fields such as new energy vehicles, information communication, and smart grids.

Building an Industrial Ecology

Xiang Libin stated that the "13th Five Year Plan" period has basically solved the "availability" problem of China's third-generation semiconductor products and related equipment, and the "14th Five Year Plan" period will focus on solving the problems of "usability, usability" and sustainable innovation ability. We will focus on key core technologies and major application directions, with a focus on breaking through bottlenecks in materials, devices, processes, and equipment technology

As the Moore's Law dominated by silicon semiconductor materials gradually moves towards the physical limit, experts believe that the development of new materials, represented by third-generation semiconductors, will reshape the market landscape and bring new opportunities in the next 10 years.

Disruptive technologies such as space technology, biotechnology, and generative AI continue to make breakthroughs, with semiconductor technology as the underlying core. Industry insiders believe that third-generation semiconductors have become a new engine for innovative development in industries such as new energy vehicles, smart grids, advanced manufacturing, mobile communication, and new displays, supporting the achievement of the "dual carbon" goal and the integrated development of digitization, networking, and intelligence.

According to the research report of CITIC Securities, third-generation semiconductor materials have wider bandgap, higher breakdown electric field, higher thermal conductivity, and higher electron saturation rate, making them more applicable in fields such as high voltage, high frequency, high temperature, and high power. Among them, silicon carbide is more mature in commercial use and has prominent advantages in high-power applications.

The accelerated integration of new generation information technology and industrialization has created huge space for the development of the integrated circuit industry. Taking Shunyi District, Beijing as an example, the entire district has preliminarily formed an industrial chain layout from equipment to materials, chips, modules, packaging testing, and downstream applications, gathering more than 20 key enterprises such as Guolian Wanzhong, Taike Tianrun, Ruineng Semiconductor, and Tesidi.

Jin Wei, a member of the Standing Committee of the Beijing Municipal Party Committee and Vice Mayor, stated that in response to the strategic needs of national development, Beijing will strengthen the research on key technologies of third-generation semiconductors, industrial ecological construction, and application scenario expansion, and promote the formation of third-generation semiconductor technology highlands and high-level industrial clusters in Beijing.

Promote demonstration applications

Cao Jianlin, former Vice Minister of the Ministry of Science and Technology and Chairman of the International Semiconductor Lighting Alliance, stated that driven by the demand in new energy vehicles, photovoltaic, energy storage and other fields, the third-generation semiconductor industry has grown faster than expected, and the entire industry has entered a period of high-speed growth.

Promote demonstration applications

At this forum, six industrial projects, including the second phase of Guolian Wanzhong Silicon Carbide Power Chip, the production of liquid phase silicon carbide substrates in the lattice field, the second phase of Tesidi thinning polishing CMP equipment production, and the production of Minggallium semiconductor gallium oxide substrates and epitaxial wafers, were successfully signed, with an estimated total investment of nearly 1.8 billion yuan.

Experts believe that the development of third-generation semiconductors in China still faces problems such as scattered industrial distribution, weak material and equipment verification capabilities, and a lack of engineering and technical personnel. To promote the development of the third-generation semiconductor industry, it is necessary to focus on key markets, strengthen collaborative innovation in the industrial chain, drive high-quality development of the industry through innovation, and achieve breakthroughs in key core technologies.

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